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IRFR220, IRFU220, SiHFR220, SiHFU220
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THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
Δ V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 200 V, V GS = 0 V
V DS = 160 V, V GS = 0 V, T J = 125 °C
200
-
2.0
-
-
-
-
0.29
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 2.9 A b
-
-
0.80
Ω
Forward Transconductance
g fs
V DS = 50 V, I D = 2.9
A b
1.7
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
260
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
100
30
-
-
-
14
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 4.8 A, V DS = 160 V,
see fig. 6 and 13 b
-
-
3.0
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
7.2
7.9
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 100 V, I D = 4.8 A,
R G = 18 Ω , R D = 20 Ω , see fig. 10 b
-
-
-
22
19
13
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
package and center of
G
D
-
4.5
-
nH
Internal Source Inductance
L S
die contact
-
7.5
-
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
4.8
19
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 4.8 A, V GS = 0
V b
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 4.8 A, dI/dt = 100 A/μs b
-
-
150
0.91
300
1.8
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
S14-0555-Rev. E, 07-Apr-14
2
Document Number: 91270
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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